Publication Information

Title: Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer

Type: Journal

Info: Semiconductors, 2016, Vol. 50, No. 5, pp 632--638.

Date: 2015-09-08

DOI: http://dx.doi.org/10.1134/S1063782616050195

Author Information

Name

Institution

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Novosibirsk Semiconductor Device Plant and Design Bureau

Films

Deposition Temperature Range = 100-200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Transistor Characteristics

Transistor Characterization

-

Diffusion Barrier Properties

Unknown

-

Substrates

Keywords

Diffusion Barrier

Notes

618



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