The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
Type:
Journal
Info:
The Journal of Chemical Physics 143, 164711 (2015)
Date:
2015-10-13
Author Information
Name | Institution |
---|---|
Tyler Kent | University of California - San Diego |
Kechao Tang | Stanford University |
Varistha Chobpattana | University of California - Santa Barbara (UCSB) |
Muhammad Adi Negara | Stanford University |
Mary Edmonds | University of California - San Diego |
William J. Mitchell | University of California - Santa Barbara (UCSB) |
Bhagawan Sahu | Global Foundries |
Rohit Galatage | Global Foundries |
Ravi Droopad | Texas State University |
Paul C. McIntyre | Stanford University |
Andrew C. Kummel | University of California - San Diego |
Films
Other HfO2
Other HfO2
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: STM, Scanning Tunneling Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
InGaAs |
Notes
Study of thermal HfO2 ALD following substrate preparation with H2 plasma or H2 plasma plus TMA exposures. |
407 |