The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
Type:
Journal
Info:
The Journal of Chemical Physics 143, 164711 (2015)
Date:
2015-10-13
Author Information
| Name | Institution |
|---|---|
| Tyler Kent | University of California - San Diego |
| Kechao Tang | Stanford University |
| Varistha Chobpattana | University of California - Santa Barbara (UCSB) |
| Muhammad Adi Negara | Stanford University |
| Mary Edmonds | University of California - San Diego |
| William J. Mitchell | University of California - Santa Barbara (UCSB) |
| Bhagawan Sahu | Global Foundries |
| Rohit Galatage | Global Foundries |
| Ravi Droopad | Texas State University |
| Paul C. McIntyre | Stanford University |
| Andrew C. Kummel | University of California - San Diego |
Films
Other HfO2
Other HfO2
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: STM, Scanning Tunneling Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| InGaAs |
Notes
| Study of thermal HfO2 ALD following substrate preparation with H2 plasma or H2 plasma plus TMA exposures. |
| 407 |