The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Type:
Journal
Info:
The Journal of Chemical Physics 143, 164711 (2015)
Date:
2015-10-13

Author Information

Name Institution
Tyler KentUniversity of California - San Diego
Kechao TangStanford University
Varistha ChobpattanaUniversity of California - Santa Barbara (UCSB)
Muhammad Adi NegaraStanford University
Mary EdmondsUniversity of California - San Diego
William J. MitchellUniversity of California - Santa Barbara (UCSB)
Bhagawan SahuGlobal Foundries
Rohit GalatageGlobal Foundries
Ravi DroopadTexas State University
Paul C. McIntyreStanford University
Andrew C. KummelUniversity of California - San Diego

Films



Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: STM, Scanning Tunneling Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

InGaAs

Keywords

Notes

Study of thermal HfO2 ALD following substrate preparation with H2 plasma or H2 plasma plus TMA exposures.
407