Publication Information

Title:
Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
Type:
Conference Proceedings
Info:
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016
Date:
2016-12-30

Author Information

Name Institution
Iosif E. ClementeMoscow Institute of Physics and Technology
Andrey V. MiakonkikhMoscow Institute of Physics and Technology

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Substrate Temperature
Analysis: Ellipsometry

Substrates

Silicon
AlGaN
SiO2
Sapphire

Keywords

Nucleation

Notes

918