Publication Information

Title: Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN

Type: Conference Proceedings

Info: Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016

Date: 2016-12-30

DOI: http://dx.doi.org/10.1117/12.2266634

Author Information

Name

Institution

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Films

Deposition Temperature Range = 50-400C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam

Substrate Temperature

Ellipsometry

J.A. Woollam

Substrates

Silicon

AlGaN

SiO2

Sapphire

Keywords

Nucleation

Notes

918



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