Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN

Type:
Conference Proceedings
Info:
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016
Date:
2016-12-30
DOI:
http://dx.doi.org/10.1117/12.2266634

Author Information

Name Institution
Iosif E. ClementeMoscow Institute of Physics and Technology
Andrey V. MiakonkikhMoscow Institute of Physics and Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Substrate Temperature
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Substrates

Silicon
AlGaN
SiO2
Sapphire

Notes

918