Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3

Type:
Journal
Info:
Journal of Applied Physics 103, 103302 (2008)
Date:
2008-03-17
DOI:
http://dx.doi.org/10.1063/1.2924406

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
J. L. van HemmenEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 70-200C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: Maxtek TM400

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Pfeiffer QMS 200

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics USB 2000

Substrates

SiO2

Notes

1439