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A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films

Type:
Poster
Info:
ALD 2010
Date:
2010-06-25
DOI:
No DOI

Author Information

Name Institution
Ziwen FangUniversity of Liverpool
Richard PotterUniversity of Liverpool
Matthew WernerUniversity of Liverpool
Qi FangOxford Instruments
Chris HodsonOxford Instruments

Films

Plasma HfNx

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Thermal HfNx

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Density
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Thermal Stability
Analysis: Anneal
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Notes

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