About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe₂ Field Effect Transistors

Type:

Journal

Info:

Nano Lett., 2013, 13 (5), pp 1983-1990

Date:

2013-03-11

DOI:

http://dx.doi.org/10.1021/nl304777e

Author Information

Name	Institution
Wei Liu	University of California - Santa Barbara (UCSB)
Jiahao Kang	University of California - Santa Barbara (UCSB)
Deblina Sarkar	University of California - Santa Barbara (UCSB)
Yasin Khatami	University of California - Santa Barbara (UCSB)
Debdeep Jena	University of Notre Dame
Kaustav Banerjee	University of California - Santa Barbara (UCSB)

Films

Plasma Al₂O₃

Hardware used: Oxford Instruments FlexAL

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 300C

Film/Plasma Properties

Substrates

WSe₂

Notes

576