Publication Information

Title: PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor

Type: Journal

Info: Semiconductors, 2017, Vol. 51, No. 1, pp 131-133.

Date: 2016-06-08

DOI: http://dx.doi.org/10.1134/S1063782617010092

Author Information

Name

Institution

North Maharashtra University

North Maharashtra University

North Maharashtra University

North Maharashtra University

North Maharashtra University

Films

Deposition Temperature = 300C

175923-04-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000DI

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Interfacial Layer

Unknown

-

Substrates

6H-SiC

Keywords

Low Power Plasma

Notes

998



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