PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor

Type:
Journal
Info:
Semiconductors, 2017, Vol. 51, No. 1, pp 131-133.
Date:
2016-06-08
DOI:
http://dx.doi.org/10.1134/S1063782617010092

Author Information

Name Institution
Anil G. KhairnarNorth Maharashtra University
V.S. PatilNorth Maharashtra University
K.S. AgrawalNorth Maharashtra University
R. S. SalunkeNorth Maharashtra University
A.M. MahajanNorth Maharashtra University

Films

Plasma ZrO2

Hardware used: Oxford Instruments FlexAL
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: -
Diagnostic: -

Substrates

6H-SiC

Notes

998