ZrO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing ZrO2 films returned 57 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
2In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
3Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
4Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
5High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
6Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
7Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
8High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
9XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
10Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
11Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
12Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
13Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
14Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
15Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
16Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
17Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
18Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
19Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
20PEALD ZrO2 Films Deposition on TiN and Si Substrates
21ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
22PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
23Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
24RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
25The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
26ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
27Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
28PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
29Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
30Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
31Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
32Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
33Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
34Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
35Lithium-Iron (III) Fluoride Battery with Double Surface Protection
36The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
37Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
38Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
39Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
40Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
41Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
42ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
43Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
44Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
45ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
46Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
47Sub-7-nm textured ZrO2 with giant ferroelectricity
48Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
49Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
50Single-Cell Photonic Nanocavity Probes
51Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
52Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
53Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
54Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
55Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
56Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
57Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices