Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen

Type:
Journal
Info:
Applied Surface Science 305 (2014) 214-220
Date:
2014-03-05
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.03.039

Author Information

Name Institution
Jhih-Jie HuangNational Taiwan University
Li-Tien HuangNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma ZrON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

Notes

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