Publication Information

Title: Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen

Type: Journal

Info: Applied Surface Science 305 (2014) 214-220

Date: 2014-03-05

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.03.039

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan Normal University

National Taiwan University

Films

Deposition Temperature = 250C

175923-04-3

7782-44-7

Deposition Temperature = 250C

175923-04-3

7782-44-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Interfacial Layer

PL, PhotoLuminescence

Unknown

Substrates

Keywords

Notes

981



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