TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

NumberVendorRegionLink
1Gelest🇺🇸Zirconium Tetrakis(Ethylmethylamide)
2Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium, 99% TEMAZ
3Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium(IV) 99% TEMAZ, contained in 50 ml cylinder for CVD/ALD
4Ereztech🇺🇸Tetrakis(ethylmethylamino) zirconium
5DOCK/CHEMICALS🇩🇪Tetrakis(ethylmethylamido)zirconium
6Pegasus Chemicals🇬🇧Tetrakis(ethylmethylamido)zirconium(IV)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
2Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
3PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
4Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
5Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
6Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
7Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
8High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
9XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
10Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
11Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
12Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
13Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
14Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
15Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
16Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
17Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
18Ferroelectricity in hafnia controlled via surface electrochemical state
19Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
20Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
21PEALD ZrO2 Films Deposition on TiN and Si Substrates
22The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
23Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
24Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
25Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
26Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
27Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
28Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
29Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
30Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
31Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
32RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
33Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
34Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
35Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation