TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

NumberVendorRegionLink
1Ereztech🇺🇸Tetrakis(ethylmethylamino) zirconium
2Gelest🇺🇸Zirconium Tetrakis(Ethylmethylamide)
3Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium, 99% TEMAZ
4DOCK/CHEMICALS🇩🇪Tetrakis(ethylmethylamino)zirconium(IV)
5Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium(IV) 99% TEMAZ, contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 31 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
2Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
3Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
4Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
5RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
6Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
7XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
8Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
9Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
10Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
11PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
12Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
13Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
14Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
15Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
16PEALD ZrO2 Films Deposition on TiN and Si Substrates
17Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
18Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
19Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
20High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
21Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
22Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
23Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
24Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
25Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
26The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
27Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
28PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
29Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
30Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
31Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen