TEMAZr, (EtMeN)₄Zr, [(C₂H₅)(CH₃)N]₄Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

Number	Vendor	Link
1	Ereztech	Tetrakis(ethylmethylamino)zirconium
2	Gelest	Zirconium Tetrakis(Ethylmethylamide)
3	Strem Chemicals, Inc.	Tetrakis(ethylmethylamino)zirconium(IV) 99% TEMAZ, contained in 50 ml cylinder for CVD/ALD
4	Strem Chemicals, Inc.	Tetrakis(ethylmethylamino)zirconium, 99% TEMAZ

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 24 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
2	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
3	Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
4	Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
5	Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
6	Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
7	Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
8	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
9	High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
10	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
11	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
12	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
13	Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
14	PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
15	PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
16	PEALD ZrO2 Films Deposition on TiN and Si Substrates
17	Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
18	Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
19	RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
20	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
21	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
22	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
23	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
24	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

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