TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

NumberVendorRegionLink
1Ereztech🇺🇸Tetrakis(ethylmethylamino) zirconium
2Gelest🇺🇸Zirconium Tetrakis(Ethylmethylamide)
3DOCK/CHEMICALS🇩🇪Tetrakis(ethylmethylamido)zirconium
4Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium(IV) 99% TEMAZ, contained in 50 ml cylinder for CVD/ALD
5Pegasus Chemicals🇬🇧Tetrakis(ethylmethylamido)zirconium(IV)
6Strem Chemicals, Inc.🇺🇸Tetrakis(ethylmethylamino)zirconium, 99% TEMAZ

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
2Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
5Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
6Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
7Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
8Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
9Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
10Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
11Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
12Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
13Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
14Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
15Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
16Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
17PEALD ZrO2 Films Deposition on TiN and Si Substrates
18Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
19Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
20The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
21High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
22RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
23Ferroelectricity in hafnia controlled via surface electrochemical state
24Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
25Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
26Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
27Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
28Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
29Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
30PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
31Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
32PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
33Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
34Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
35Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen