TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

NumberVendorLink
1EreztechTetrakis(ethylmethylamino)zirconium
2GelestZirconium Tetrakis(Ethylmethylamide)
3Strem Chemicals, Inc.Tetrakis(ethylmethylamino)zirconium(IV) 99% TEMAZ, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Tetrakis(ethylmethylamino)zirconium, 99% TEMAZ

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 24 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
2Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
3Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
4Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
5Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
6Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
7Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
8Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
9High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
10Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
11Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
12Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
13Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
14PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
15PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
16PEALD ZrO2 Films Deposition on TiN and Si Substrates
17Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
18Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
19RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
20The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
21Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
22Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
23Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
24Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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