TEMAZr, (EtMeN)₄Zr, [(C₂H₅)(CH₃)N]₄Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide, CAS# 175923-04-3

Where to buy

Number	Vendor	Link
1	Ereztech	Tetrakis(ethylmethylamino)zirconium

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 27 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
2	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
3	Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
4	Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
5	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
6	Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
7	Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
8	Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
9	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
10	High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
11	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
12	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
13	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
14	Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
15	PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
16	PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
17	PEALD ZrO2 Films Deposition on TiN and Si Substrates
18	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
19	Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
20	Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
21	RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
22	Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
23	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
24	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
25	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
26	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
27	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

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