Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
Type:
Journal
Info:
Applied Surface Science Volume 324, 1 January 2015, Pages 662-668
Date:
2014-11-03
Author Information
| Name | Institution |
|---|---|
| Jhih-Jie Huang | National Taiwan University |
| Yi-Jen Tsai | National Taiwan University |
| Meng-Chen Tsai | National Taiwan University |
| Li-Tien Huang | National Taiwan University |
| Min-Hung Lee | National Taiwan Normal University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma ZrON
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 175923-04-3
CAS#: 7782-44-7
CAS#: 7664-41-7
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| Ultratech Fiji PEALD N-doped ZrO2 with improved high-k dielectric properties. |
| 259 |