Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Type:
Journal
Info:
Applied Surface Science Volume 324, 1 January 2015, Pages 662-668
Date:
2014-11-03

Author Information

Name Institution
Jhih-Jie HuangNational Taiwan University
Yi-Jen TsaiNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Li-Tien HuangNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films
Gate Dielectric

Notes

Ultratech Fiji PEALD N-doped ZrO2 with improved high-k dielectric properties.
259