Publication Information

Title: Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Type: Journal

Info: Applied Surface Science Volume 324, 1 January 2015, Pages 662-668

Date: 2014-11-03

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.11.009

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan Normal University

National Taiwan University

Films

Deposition Temperature = 250C

175923-04-3

7782-44-7

Deposition Temperature = 250C

175923-04-3

7782-44-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Unknown

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Interlayer

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films

Gate Dielectric

Notes

Ultratech Fiji PEALD N-doped ZrO2 with improved high-k dielectric properties.

259



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