2022 Year in Review

February 2023 Stats


The publication database currently has 1673 entries.
204 Films
279 Precursors
78 Dep Hardware Sets
253 Characteristics
91 Theses
5136 Authors

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2021 Year in Review
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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

Min-Hung Lee Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Min-Hung Lee returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
2Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
3Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
4Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
5Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
6In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
7Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
8Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
9Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability

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