Publication Information

Title: Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Type: Journal

Info: Applied Surface Science Volume 266, 1 February 2013, Pages 89-93

Date: 2013-02-01

DOI: http://dx.doi.org/10.1016/j.apsusc.2012.11.097

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Deposition Temperature = 250C

352535-01-4

7782-44-7

Deposition Temperature = 250C

352535-01-4

7782-44-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

-

Interlayer

TEM, Transmission Electron Microscope

-

Photoluminescence

PL, PhotoLuminescence

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Leakage Current

I-V, Current-Voltage Measurements

HP 4156B Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

Substrates cleaned and HF dipped.

134



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