Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Type:
Journal
Info:
Applied Surface Science Volume 266, 1 February 2013, Pages 89-93
Date:
2013-02-01
DOI:
http://dx.doi.org/10.1016/j.apsusc.2012.11.097

Author Information

Name Institution
Li-Tien HuangNational Taiwan University
Ming-lun ChangNational Taiwan University
Jhih-Jie HuangNational Taiwan University
Hsin-Chih LinNational Taiwan University
Chin-Lung KuoNational Taiwan University
Min-Hung LeeNational Taiwan University
Chee Wee LiuNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

Substrates cleaned and HF dipped.
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