Publication Information

Title:
Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
Type:
Journal
Info:
Applied Surface Science Volume 266, 1 February 2013, Pages 89-93
Date:
2013-02-01

Author Information

Name Institution
Li-Tien HuangNational Taiwan University
Ming-lun ChangNational Taiwan University
Jhih-Jie HuangNational Taiwan University
Hsin-Chih LinNational Taiwan University
Chin-Lung KuoNational Taiwan University
Min-Hung LeeNational Taiwan University
Chee Wee LiuNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films



Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

Substrates cleaned and HF dipped.
134