Your search for plasma enhanced atomic layer deposition publications discussing HfON films returned 5 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas|
|2||Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer|
|3||Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers|
|4||HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer|
|5||Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma|
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