2022 Year in Review

February 2023 Stats


The publication database currently has 1673 entries.
204 Films
279 Precursors
78 Dep Hardware Sets
253 Characteristics
91 Theses
5136 Authors

Use Advanced Search for more complex searches


2021 Year in Review
ALD Links
Contact Us
LinkedIn Profile

Recent Database Additions
Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

HfON Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfON films returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
2Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
3Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
4Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
5Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
6Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
7The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
8Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
9HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer

© 2014-2023 plasma-ald.com