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The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
Type:
Journal
Info:
Journal of Applied Physics 104, 064111 (2008)
Date:
2008-07-17
Author Information
| Name | Institution |
|---|---|
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma HfO2
Plasma HfON
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 19962-11-9
CAS#: 7782-44-7
CAS#: 7727-37-9
Film/Plasma Properties
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(001) |
Notes
| 1350 |