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Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
Type:
Journal
Info:
Applied Physics Letters 91, 092901 (2007)
Date:
2007-08-05
Author Information
| Name | Institution |
|---|---|
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma HfO2
Plasma HfON
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(001) |
Notes
| 1194 |