Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics

Type:
Journal
Info:
Applied Physics Letters 91, 092901 (2007)
Date:
2007-08-05

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(001)

Keywords

Notes

1194