Publication Information

Title: Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics

Type: Journal

Info: Applied Physics Letters 91, 092901 (2007)

Date: 2007-08-05

DOI: http://dx.doi.org/10.1063/1.2776350

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Plasma HfO2 using Custom Remote

Deposition Temperature = 250C

19962-11-9

7782-44-7

Plasma HfON using Custom Remote

Deposition Temperature = 250C

19962-11-9

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Interlayer

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(001)

Keywords

Notes

1194



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