Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Custom Remote Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Custom Remote hardware returned 16 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
2HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
3Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
4Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
5The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
6Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
7Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
8Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
9Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
10Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
11Characteristics of HfO2 thin films grown by plasma atomic layer deposition
12Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
13Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
14Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
15Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
16Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition