Publication Information

Title:
HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
Type:
Conference Proceedings
Info:
ECS Transactions, 3 (15) 89-98 (2007)
Date:
2007-07-01

Author Information

Name Institution
Seokhoon KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom Remote


Film/Plasma Properties

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2
SiOxNy

Keywords

Notes

1173