
HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
Type:
Conference Proceedings
Info:
ECS Transactions, 3 (15) 89-98 (2007)
Date:
2007-07-01
Author Information
Name | Institution |
---|---|
Seokhoon Kim | Hanyang University |
Hyeongtag Jeon | Hanyang University |
Films
Plasma HfO2
Hardware used: Custom Remote
Film/Plasma Properties
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: MEIS, Medium Energy Ion Scattering
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Substrates
SiO2 |
SiOxNy |
Notes
1173 |