Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

Publication Information

Title: Characteristics of remote plasma atomic layer-deposited HfO₂ films on O₂ and N₂ plasma-pretreated Si substrates

Type: Journal

Info: J. Vac. Sci. Technol. A 24(3), May/Jun 2006

Date: 2006-03-13

DOI: http://dx.doi.org/10.1116/1.2194029

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Plasma HfO₂ using Custom Remote

Deposition Temperature = 300C

TDEAHf, (Et₂N)₄Hf, [(C₂H₅)₂N]₄Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide

19824-55-6

Where to buy precursor

O₂, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Interfacial Layer

TEM, Transmission Electron Microscope

Substrates

SiO₂

SiO_xN_y

Keywords

Notes

1210

Mark Sowa

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Deposition Hardware

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Publication Information

Author Information

Films

Plasma HfO2 using Custom Remote

Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Keywords

Notes

Shortcuts

Plasma HfO₂ using Custom Remote