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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
Type:
Journal
Info:
J. Vac. Sci. Technol. A 24(3), May/Jun 2006
Date:
2006-03-13
Author Information
| Name | Institution |
|---|---|
| Jihoon Choi | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Jinwoo Kim | Hanyang University |
| Hyunseok Kang | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Choelhwyi Bae | Samsung Electronics Co. |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Bonding States
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
| SiOxNy |
Keywords
Notes
| 1210 |