Publication Information

Title:
Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
Type:
Journal
Info:
J. Vac. Sci. Technol. A 24(3), May/Jun 2006
Date:
2006-03-13

Author Information

Name Institution
Jihoon ChoiHanyang University
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Hyunseok KangHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeSamsung Electronics Co.

Films


Film/Plasma Properties

Characteristic: Bonding States
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2
SiOxNy

Keywords

Notes

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