Title: Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
Type: Journal
Info: J. Vac. Sci. Technol. A 24(3), May/Jun 2006
Date: 2006-03-13
DOI: http://dx.doi.org/10.1116/1.2194029
Name
Institution
Hanyang University
Hanyang University
Hanyang University
Hanyang University
Hanyang University
Samsung Electronics Co.
19824-55-6
Characteristic
Analysis
Diagnostic
Bonding States
ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
-
Chemical Composition, Impurities
AES, Auger Electron Spectroscopy
-
EOT, Equivalent Oxide Thickness
C-V, Capacitance-Voltage Measurements
Keithley 590 CV Analyzer
Leakage Current
I-V, Current-Voltage Measurements
HP 4155A Semiconductor Parameter Analyzer
Interfacial Layer
TEM, Transmission Electron Microscope
-
SiO2
SiOxNy
1210
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