Publication Information

Title: Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

Type: Journal

Info: J. Vac. Sci. Technol. A 24(3), May/Jun 2006

Date: 2006-03-13

DOI: http://dx.doi.org/10.1116/1.2194029

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Plasma HfO2 using Custom Remote

Deposition Temperature = 300C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Interfacial Layer

TEM, Transmission Electron Microscope

-

Substrates

SiO2

SiOxNy

Keywords

Notes

1210



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