Publication Information

Title: Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

Type: Journal

Info: J. Vac. Sci. Technol. A 24(3), May/Jun 2006

Date: 2006-03-13

DOI: http://dx.doi.org/10.1116/1.2194029

Author Information

Name

Institution

Jihoon Choi

Hanyang University

Seokhoon Kim

Hanyang University

Jinwoo Kim

Hanyang University

Hyunseok Kang

Hanyang University

Hyeongtag Jeon

Hanyang University

Choelhwyi Bae

Samsung Electronics Co.

Films

Plasma HfO2 using Custom Remote

Deposition Temperature = 300C

TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide

19824-55-6

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Substrates

SiO2

SiOxNy

Keywords

Notes

1210


Mark Sowa

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