Publication Information

Title: Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

Type: Journal

Info: Journal of Applied Physics 98, 094504 (2005)

Date: 2005-09-23

DOI: http://dx.doi.org/10.1063/1.2121929

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

Gwanju Institute of Science and Technology (GIST)

Hynix Semiconductor

North Carolina State University

Films

Deposition Temperature = 250C

19824-55-6

7782-44-7

Plasma HfO2 using Custom Remote

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Compositional Depth Profiling

MEIS, Medium Energy Ion Scattering

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

Si(100)

Keywords

Notes

1244



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