Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
Type:
Journal
Info:
Journal of Applied Physics 98, 094504 (2005)
Date:
2005-09-23
Author Information
| Name | Institution |
|---|---|
| Jinwoo Kim | Hanyang University |
| Seokhoon Kim | Hanyang University |
| Hyunseok Kang | Hanyang University |
| Jihoon Choi | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Mannho Cho | Korea Research Institute of Standards and Science (KRISS) |
| Kwunbum Chung | Korea Research Institute of Standards and Science (KRISS) |
| Sungkwun Back | Gwanju Institute of Science and Technology (GIST) |
| Kyungdong Yoo | Hynix Semiconductor |
| Choelhwyi Bae | North Carolina State University |
Films
Plasma HfO2
Plasma HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: MEIS, Medium Energy Ion Scattering
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Si(100) |
Notes
| 1244 |