Custom Direct Capacitively Coupled Plasma Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Custom Direct Capacitively Coupled Plasma hardware returned 81 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Optical in situ monitoring of plasma-enhanced atomic layer deposition process
2Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
3Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
4Formation of aluminum nitride thin films as gate dielectrics on Si(100)
5Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
6Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
7Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
8Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
9Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
10Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
11Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
12Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
13Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
14Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
15SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
16Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
17An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
18Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
19Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
20Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
21Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
22A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition
23Characteristics of HfO2 thin films grown by plasma atomic layer deposition
24Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
25Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
26Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
27Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
28Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
29An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
30Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
31Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
32Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
33Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
34Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
35A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
36Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
37Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
38WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
39Film Uniformity in Atomic Layer Deposition
40Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
41Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
42Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
43High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
44Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
45Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
46Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
47Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
48A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
49Carbon content control of silicon oxycarbide film with methane containing plasma
50GeSbTe deposition for the PRAM application
51Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
52Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
53Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
54Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
55Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
56Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
57Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
58ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"
59Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
60Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
61Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
62Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
63Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
64Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
65PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
66Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
67Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
68Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
69Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
70Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
71Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
72Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
73Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
74Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
75Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
76Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
77Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
78Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
79Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
80Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
81Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films