Custom Direct Capacitively Coupled Plasma Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Custom Direct Capacitively Coupled Plasma hardware returned 85 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
2Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
3Characteristics of HfO2 thin films grown by plasma atomic layer deposition
4Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
5Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
6Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
7Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
8GeSbTe deposition for the PRAM application
9Optical in situ monitoring of plasma-enhanced atomic layer deposition process
10Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
11Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
12Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
13Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
14Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
15Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
16Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
17Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
18Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
19Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
20Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
21Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
22Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
23Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
24Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
25A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition
26Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
27Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
28Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
29A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
30Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
31Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
32Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
33Film Uniformity in Atomic Layer Deposition
34Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
35Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
36Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
37Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
38Carbon content control of silicon oxycarbide film with methane containing plasma
39Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
40Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
41Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
42Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
43Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
44Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
45Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
46Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
47Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
48Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
49Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
50Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
51SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
52WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
53PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
54Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
55Influence of Precursor Density and Conversion Time on the Orientation of Vapor-Deposited ZIF-8
56Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
57Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
58ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"
59Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
60Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
61Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
62Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
63Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
64Formation of aluminum nitride thin films as gate dielectrics on Si(100)
65Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
66An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
67Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
68Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
69Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
70High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
71Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
72Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
73Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
74Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
75Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
76Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
77An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
78Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
79Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
80Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
81A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
82Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
83Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
84Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
85Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition