Custom Direct Plasma Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Custom Direct Plasma hardware returned 55 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition
3An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
4Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
5Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
6Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
7Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
8Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
9Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
10Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
11Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
12Characteristics of HfO2 thin films grown by plasma atomic layer deposition
13Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
14Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
15Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
16Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
17Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
18Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
19Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
20Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
21Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
22Film Uniformity in Atomic Layer Deposition
23Formation of aluminum nitride thin films as gate dielectrics on Si(100)
24Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
25Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
26Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
27High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
28Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
29Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
30Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
31Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
32Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
33Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
34Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
35Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
36Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
37Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
38Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
39Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
40Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
41PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
42Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
43Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
44Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
45Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
46Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
47Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
48Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
49Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
50Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
51Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
52Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
53Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
54Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
55WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications


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