Custom Direct Capacitively Coupled Plasma Plasma Enhanced Atomic Layer Deposition Film Publications

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1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition
3An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
4An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
5Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
6Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
7Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
8Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
9Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
10Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
11Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
12Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
13Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
14Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
15Characteristics of HfO2 thin films grown by plasma atomic layer deposition
16Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
17Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
18Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
19Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
20Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
21Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
22Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
23Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
24Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
25Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
26Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
27Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
28Film Uniformity in Atomic Layer Deposition
29Formation of aluminum nitride thin films as gate dielectrics on Si(100)
30Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
31GeSbTe deposition for the PRAM application
32Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
33Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
34High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
35Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
36Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
37Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
38Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
39Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
40Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
41Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
42Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
43Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
44Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
45Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
46Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
47Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
48Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
49Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
50Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
51Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
52Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
53PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
54Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
55Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
56Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
57Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
58Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
59Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
60Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
61Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
62Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
63Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
64Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
65Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
66Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
67Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
68Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
69Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
70Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
71Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
72WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications