Publication Information

Title:
Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 48, No. 1, January 2006, pp. 131~136
Date:
2006-01-01

Author Information

Name Institution
Jaehyoung KooHanyang University
Seokhoon KimHanyang University
Sangmin JeonHanyang University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University
Youngdo WonHanyang University

Films

Plasma Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Plasma-Enhanced Atomic Layer Deposition
TMA
DMAI
Al2O3
Gate Dielectric

Notes

Rapid thermal anneal
Forming gas anneal
Substrates pirahna and HF cleaned
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