Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 48, No. 1, January 2006, pp. 131~136
Date:
2006-01-01
DOI:
http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=3E5B5A04-31C7-4284-BF19-8218BE2A8A3F&globalmenu=3&localmenu=10

Author Information

Name Institution
Jaehyoung KooHanyang University
Seokhoon KimHanyang University
Sangmin JeonHanyang University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University
Youngdo WonHanyang University

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-300C

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 110-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

Rapid thermal anneal
Forming gas anneal
Substrates pirahna and HF cleaned
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