Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3, CAS# 6063-89-4

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALSπŸ‡©πŸ‡ͺDimethylaluminum-isopropoxide
2American ElementsπŸ‡ΊπŸ‡ΈAluminum Dimethyl Isopropoxide
3Alfa ChemistryπŸ‡ΊπŸ‡ΈDimethylaluminum i-propoxide
4EreztechπŸ‡ΊπŸ‡ΈAluminum Dimethyl Isopropoxide
5Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈDimethylaluminum i-propoxide, 98% (99.99+%-Al) PURATREM
6GelestπŸ‡ΊπŸ‡ΈDimethylisopropoxyaluminum
7Pegasus ChemicalsπŸ‡¬πŸ‡§Dimethylaluminiumisopropoxide

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
2Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
3Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(ΞΌ-OiPr)]2, as an alternative aluminum precursor
4Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells
5Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
6Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
7Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
8Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
9Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
10Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
11Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
12Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors