Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.



DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3, CAS# 6063-89-4

Where to buy

NumberVendorRegionLink
1Pegasus ChemicalsπŸ‡¬πŸ‡§Dimethylaluminiumisopropoxide
2GelestπŸ‡ΊπŸ‡ΈDimethylisopropoxyaluminum
3Alfa ChemistryπŸ‡ΊπŸ‡ΈDimethylaluminum i-propoxide
4DOCK/CHEMICALSπŸ‡©πŸ‡ͺDimethylaluminum-isopropoxide
5Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈDimethylaluminum i-propoxide, 98% (99.99+%-Al) PURATREM
6EreztechπŸ‡ΊπŸ‡ΈAluminum Dimethyl Isopropoxide
7American ElementsπŸ‡ΊπŸ‡ΈAluminum Dimethyl Isopropoxide

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
2Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
3Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
4Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
5Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
6Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
7Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells
8Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
9Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
10Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
11Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
12Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(ΞΌ-OiPr)]2, as an alternative aluminum precursor