Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
Type:
Conference Proceedings
Info:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
Date:
2018-06-10
Author Information
Name | Institution |
---|---|
Chang-Yeh Lee | University of New South Wales |
Xin Cui | University of New South Wales |
Tian Zhang | University of New South Wales |
Rong Deng | University of New South Wales |
Kyung Kim | University of New South Wales |
Bram Hoex | University of New South Wales |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: Non-contact Corona C-V
Characteristic: Fixed Charge Density
Analysis: Non-contact Corona C-V
Characteristic: Interfacial Layer
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Current Density
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Substrates
Si with native oxide |
Notes
1420 |