Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors

Type:
Journal
Info:
Microelectronic Engineering 254 (2022) 111708
Date:
2022-01-04

Author Information

Name Institution
Yiyi YanUniversite catholique de Louvain (UCL)
Valeriya KilchytskaUniversite catholique de Louvain (UCL)
Bin WangHunan University
S├ębastien FanielUniversite catholique de Louvain (UCL)
Yun ZengHunan University
Jean-Pierre RaskinUniversite catholique de Louvain (UCL)
Denis FlandreUniversite catholique de Louvain (UCL)

Films




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1673