Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Type:
Journal
Info:
Microelectronic Engineering 254 (2022) 111708
Date:
2022-01-04
Author Information
| Name | Institution |
|---|---|
| Yiyi Yan | Universite catholique de Louvain (UCL) |
| Valeriya Kilchytska | Universite catholique de Louvain (UCL) |
| Bin Wang | Hunan University |
| Sébastien Faniel | Universite catholique de Louvain (UCL) |
| Yun Zeng | Hunan University |
| Jean-Pierre Raskin | Universite catholique de Louvain (UCL) |
| Denis Flandre | Universite catholique de Louvain (UCL) |
Films
Thermal Al2O3
Plasma Al2O3
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1673 |