Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 116, 123702 (2014)
Date:
2014-09-06
DOI:
http://dx.doi.org/10.1063/1.4895985

Author Information

Name Institution
Jialing YangArizona State University

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 220C

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 180C

Plasma SiO2

Hardware used: Custom Remote Inductively Coupled Plasma
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Notes

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