Publication Information

Title: Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Type: Journal

Info: JOURNAL OF APPLIED PHYSICS 116, 123702 (2014)

Date: 2014-09-06

DOI: http://dx.doi.org/10.1063/1.4895985

Author Information

Name

Institution

Arizona State University

Films

Plasma HfO2 using Custom ICP

Deposition Temperature = 220C

352535-01-4

7782-44-7

Plasma Al2O3 using Custom ICP

Deposition Temperature = 180C

6063-89-4

7782-44-7

Plasma SiO2 using Custom ICP

Deposition Temperature = 200C

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

233



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