About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects

Type:
Journal
Info:
J. Vac. Sci. Technol. A, Vol. 35, No. 6, Nov/Dec 2017
Date:
2017-07-21
DOI:
http://dx.doi.org/10.1116/1.4997421

Author Information

Name Institution
Christie J. TrimbleUniversity of Maryland
Trevor Van EngelhovenArizona State University
Anna M. ZaniewskiArizona State University
Manpuneet K. BenipalArizona State University
Robert J. NemanichArizona State University

Films

Plasma Al2O3

Hardware used: Custom
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 155C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Graphene

Notes

1138