Publication Information

Title: Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide

Type: Journal

Info: J. Vac. Sci. Technol. A 32(2), Mar/Apr 2014, 021514

Date: 2014-02-10

DOI: http://dx.doi.org/10.1116/1.4866378

Author Information

Name

Institution

Arizona State University

Arizona State University

Arizona State University

Arizona State University

Films

Plasma Al2O3 using Custom ICP

Deposition Temperature Range = 25-320C

6063-89-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

QCM, Quartz Crystal Microbalance

Unknown

Thickness

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Thickness

RBS, Rutherford Backscattering Spectrometry

Unknown

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

UPS, Ultraviolet Photoemission Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

UPS, Ultraviolet Photoemission Spectroscopy

Unknown

Band Gap

ELS, EELS, Electron Energy Loss Spectroscopy

Unknown

Refractive Index

Ellipsometry

Unknown

Electron Affinitiy

UPS, Ultraviolet Photoemission Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

Si(100)

Keywords

Dielectric Thin Films

PEALD Film Development

Notes

Refs 3 and 33 discuss hardware specifics

13



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