Publication Information

Title: Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide

Type: Journal

Info: J. Vac. Sci. Technol. A 32(2), Mar/Apr 2014, 021514

Date: 2014-02-10

DOI: http://dx.doi.org/10.1116/1.4866378

Author Information

Name

Institution

Arizona State University

Arizona State University

Arizona State University

Arizona State University

Films

Plasma Al2O3 using Custom ICP

Deposition Temperature Range = 25-320C

6063-89-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

QCM, Quartz Crystal Microbalance

-

Thickness

XPS, X-ray Photoelectron Spectroscopy

-

Thickness

XRR, X-Ray Reflectivity

-

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Thickness

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

UPS, Ultraviolet Photoemission Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Bonding States

UPS, Ultraviolet Photoemission Spectroscopy

-

Band Gap

ELS, EELS, Electron Energy Loss Spectroscopy

-

Refractive Index

Ellipsometry

-

Electron Affinitiy

UPS, Ultraviolet Photoemission Spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Density

XRR, X-Ray Reflectivity

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Substrates

Si(100)

Keywords

Dielectric Thin Films

PEALD Film Development

Notes

Refs 3 and 33 discuss hardware specifics

13



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