Publication Information

Title:
Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(2), Mar/Apr 2014, 021514
Date:
2014-02-10

Author Information

Name Institution
Jialing YangArizona State University
Brianna S. EllerArizona State University
Manpuneet KaurArizona State University
Robert J. NemanichArizona State University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Band Gap
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Electron Affinitiy
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Substrates

Si(100)

Keywords

Dielectric Thin Films
PEALD Film Development

Notes

Refs 3 and 33 discuss hardware specifics
13