Publication Information

Title:
Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 021505 (2012)
Date:
2012-01-19

Author Information

Name Institution
Stephen E. PottsEindhoven University of Technology
Gijs DingemansEindhoven University of Technology
Christophe LachaudAir Liquide
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance

Substrates

Silicon

Keywords

Passivation

Notes

662