Oxford Instruments OpAL Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for plasma enhanced atomic layer deposition publications using Oxford Instruments OpAL hardware returned 70 records. If there are too many results, you may want to use the multi-factor search to narrow the results.
| Number | Title |
|---|
| 1 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 2 | α-Ga2O3 grown by low temperature atomic layer deposition on sapphire |
| 3 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 4 | A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density |
| 5 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 6 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 7 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
| 8 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
| 9 | Encapsulation method for atom probe tomography analysis of nanoparticles |
| 10 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 11 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 12 | Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition |
| 13 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 14 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 15 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 16 | Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide |
| 17 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 18 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
| 19 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 20 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
| 21 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 22 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
| 23 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
| 24 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 25 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 26 | Gadolinium nitride films deposited using a PEALD based process |
| 27 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 28 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 29 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 30 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 31 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 32 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 33 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 34 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 35 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
| 36 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 37 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 38 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 39 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
| 40 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 41 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 42 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 43 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
| 44 | Mechanical characterization of hollow ceramic nanolattices |
| 45 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 46 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
| 47 | Comparative study of ALD SiO2 thin films for optical applications |
| 48 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 49 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
| 50 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
| 51 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
| 52 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 53 | High-Reflective Coatings For Ground and Space Based Applications |
| 54 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 55 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 56 | Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells |
| 57 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
| 58 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 59 | Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes |
| 60 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 61 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 62 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 63 | Hafnia and alumina on sulphur passivated germanium |
| 64 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
| 65 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
| 66 | High-efficiency embedded transmission grating |
| 67 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 68 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 69 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
| 70 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
