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α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Type:
Journal
Info:
Journal of Crystal Growth 487 (2018) 23-27
Date:
2018-02-07
Author Information
| Name | Institution |
|---|---|
| Joseph W. Roberts | University of Liverpool |
| J.C. Jarman | University of Cambridge |
| D.N. Johnstone | University of Cambridge |
| P.A. Midgley | University of Cambridge |
| Paul R. Chalker | University of Liverpool |
| Rachel A. Oliver | University of Cambridge |
| Fabien C-P. Massabuau | University of Cambridge |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Substrates
| Sapphire |
Notes
| 1537 |