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α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

Type:
Journal
Info:
Journal of Crystal Growth 487 (2018) 23-27
Date:
2018-02-07
DOI:
https://doi.org/10.1016/j.jcrysgro.2018.02.014

Author Information

Name Institution
Joseph W. RobertsUniversity of Liverpool
J.C. JarmanUniversity of Cambridge
D.N. JohnstoneUniversity of Cambridge
P.A. MidgleyUniversity of Cambridge
Paul R. ChalkerUniversity of Liverpool
Rachel A. OliverUniversity of Cambridge
Fabien C-P. MassabuauUniversity of Cambridge

Films

Plasma Ga2O3

Hardware used: Oxford Instruments OpAL
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon MM-16

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: FEI Technai F20

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: Philips CM300ST-FEG

Substrates

Sapphire

Notes

1537