α-Ga2O3 grown by low temperature atomic layer deposition on sapphire

Type:
Journal
Info:
Journal of Crystal Growth 487 (2018) 23-27
Date:
2018-02-07

Author Information

Name Institution
J. W. RobertsUniversity of Liverpool
J.C. JarmanUniversity of Cambridge
D.N. JohnstoneUniversity of Cambridge
P.A. MidgleyUniversity of Cambridge
Paul R. ChalkerUniversity of Liverpool
R.A. OliverUniversity of Cambridge
F.C-P. MassabuauUniversity of Cambridge

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Substrates

Sapphire

Keywords

Notes

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