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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
Type:
Journal
Info:
Nanotechnology 26 024003
Date:
2014-10-17
Author Information
| Name | Institution |
|---|---|
| Stephan Ratzsch | Friedrich-Schiller-Universität Jena |
Films
Plasma TiO2
Hardware used: Oxford Instruments OpAL
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Unknown
Analysis: Raman Spectroscopy
Substrates
| Silicon |
| SiO2 |
Keywords
| PEALD Film Development |
Notes
| Oxford Instruments OpAL study of TiO2 morphology as a function of O2 plasma properties. |
| 263 |