Publication Information

Title:
Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
Type:
Journal
Info:
Microelectronic Engineering, Volume 109, September 2013, Pages 126–128
Date:
2013-03-16

Author Information

Name Institution
S. MatherUniversity of Liverpool
Naser SedghiUniversity of Liverpool
M. AlthobaitiUniversity of Liverpool
Ivona Z. MitrovicUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Steve HallUniversity of Liverpool

Films

Plasma HfO2


Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Al2O3

Keywords

Notes

590