Publication Information

Title: Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

Type: Journal

Info: Microelectronic Engineering, Volume 109, September 2013, Pages 126–128

Date: 2013-03-16

DOI: http://dx.doi.org/10.1016/j.mee.2013.03.032

Author Information

Name

Institution

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

Films

Deposition Temperature = 250C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Keithley 617B electrometer

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4192A

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4192A

Images

TEM, Transmission Electron Microscope

JEOL 2100

Thickness

TEM, Transmission Electron Microscope

JEOL 2100

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Al2O3

Keywords

Notes

590



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