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Trapped charge densities in Al2O3-based silicon surface passivation layers

Type:
Journal
Info:
Journal of Applied Physics 119, 215306 (2016)
Date:
2016-05-19
DOI:
http://dx.doi.org/10.1063/1.4953141

Author Information

Name Institution
Paul Matthias JordanNaMLab gGmbH
Daniel Kai SimonNaMLab gGmbH
Thomas MikolajickNaMLab gGmbH
Ingo DirnstorferNaMLab gGmbH

Films

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 150C

Thermal HfO2

Hardware used: Oxford Instruments OpAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 150C

Plasma SiO2

Hardware used: Oxford Instruments OpAL
Diaminosilane, SiH2(NH2)2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Minority Carrier Lifetime
Analysis: MDP, Microwave Detected Photoconductivity
Diagnostic: MDPmap, Freiberg Instruments GmbH

Substrates

Si(100)

Notes

912