Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Type:
Journal
Info:
Scientific Reports 6, Article number: 27676 (2016)
Date:
2016-06-09
Author Information
Name | Institution |
---|---|
Qingkai Qian | Hong Kong University of Science and Technology |
Baikui Li | Hong Kong University of Science and Technology |
Mengyuan Hua | Hong Kong University of Science and Technology |
Zhaofu Zhang | Hong Kong University of Science and Technology |
Feifei Lan | The 46th Research Institute of CETC |
Yongkuan Xu | The 46th Research Institute of CETC |
Ruyue Yan | The 46th Research Institute of CETC |
Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Plasma AlN
Thermal Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
Notes
993 |