Publication Information

Title:
Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
Type:
Journal
Info:
Scientific Reports 6, Article number: 27676 (2016)
Date:
2016-06-09

Author Information

Name Institution
Qingkai QianHong Kong University of Science and Technology
Baikui LiHong Kong University of Science and Technology
Mengyuan HuaHong Kong University of Science and Technology
Zhaofu ZhangHong Kong University of Science and Technology
Feifei LanThe 46th Research Institute of CETC
Yongkuan XuThe 46th Research Institute of CETC
Ruyue YanThe 46th Research Institute of CETC
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN


Thermal Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Keywords

Notes

993