Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
Type:
Journal
Info:
Micromachines 2020, 11, 1128
Date:
2020-12-15
Author Information
| Name | Institution |
|---|---|
| Armin Barthel | University of Cambridge |
| Joseph W. Roberts | University of Liverpool |
| Mari Napari | University of Cambridge |
| Martin Frentrup | University of Cambridge |
| Tahmida N. Huq | University of Cambridge |
| András Kovács | Peter-Grünberg Institute |
| Rachel A. Oliver | University of Cambridge |
| Paul R. Chalker | University of Liverpool |
| Timo Sajavaara | University of Jyväskylä |
| Fabien C-P. Massabuau | University of Cambridge |
Films
Plasma Ga2O3
Plasma GaTiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Substrates
| Sapphire |
Notes
| 1676 |