Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

Type:
Journal
Info:
Micromachines 2020, 11, 1128
Date:
2020-12-15

Author Information

Name Institution
Armin BarthelUniversity of Cambridge
Joseph W. RobertsUniversity of Liverpool
Mari NapariUniversity of Cambridge
Martin FrentrupUniversity of Cambridge
Tahmida N. HuqUniversity of Cambridge
András KovácsPeter-Grünberg Institute
Rachel A. OliverUniversity of Cambridge
Paul R. ChalkerUniversity of Liverpool
Timo SajavaaraUniversity of Jyväskylä
Fabien C-P. MassabuauUniversity of Cambridge

Films

Plasma Ga2O3



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Substrates

Sapphire

Notes

1676