Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(4), Jul/Aug 2015
Date:
2015-05-14
Author Information
| Name | Institution |
|---|---|
| Florian Talkenberg | Leibniz Institute of Photonic Technology |
| Stefan Illhardt | Leibniz Institute of Photonic Technology |
| György Zoltán Radnóczi | Institute of Technical Physics and Materials Science |
| Béla Pécz | Institute of Technical Physics and Materials Science |
| Gabriele Schmidl | Leibniz Institute of Photonic Technology |
| Alexander Schleusener | Leibniz Institute of Photonic Technology |
| Kadyrjan Dikhanbayev | al-Farabi Kazakh National University |
| Gauhar Mussabek | al-Farabi Kazakh National University |
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Vladimir Sivakov | Leibniz Institute of Photonic Technology |
Films
Plasma Al2O3
Thermal Al:ZnO
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Characteristic: Efficiency
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| Al2O3 |
Notes
| Oxford Instruments OpAL multifaceted study of plasma A2O3 passivation layer as well as predeposition plasma surface treatments on solar cell performance. |
| 311 |