Publication Information

Title:
Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(4), Jul/Aug 2015
Date:
2015-05-14

Author Information

Name Institution
Florian TalkenbergLeibniz Institute of Photonic Technology
Stefan IllhardtLeibniz Institute of Photonic Technology
György Zoltán RadnócziInstitute of Technical Physics and Materials Science
Béla PéczInstitute of Technical Physics and Materials Science
Gabriele SchmidlLeibniz Institute of Photonic Technology
Alexander SchleusenerLeibniz Institute of Photonic Technology
Kadyrjan Dikhanbayeval-Farabi Kazakh National University
Gauhar Mussabekal-Farabi Kazakh National University
Alexander S. GudovskikhSt. Petersburg Academic University
Vladimir SivakovLeibniz Institute of Photonic Technology

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements

Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements

Characteristic: Efficiency
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)
Al2O3

Keywords

Solar
Passivation

Notes

Oxford Instruments OpAL multifaceted study of plasma A2O3 passivation layer as well as predeposition plasma surface treatments on solar cell performance.
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