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Publication Information

Title: Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell

Type: Journal

Info: J. Vac. Sci. Technol. A 33(4), Jul/Aug 2015

Date: 2015-05-14

DOI: http://dx.doi.org/10.1116/1.4921726

Author Information

Name

Institution

Leibniz Institute of Photonic Technology

Leibniz Institute of Photonic Technology

Institute of Technical Physics and Materials Science

Institute of Technical Physics and Materials Science

Leibniz Institute of Photonic Technology

Leibniz Institute of Photonic Technology

al-Farabi Kazakh National University

al-Farabi Kazakh National University

St. Petersburg Academic University

Leibniz Institute of Photonic Technology

Films

Deposition Temperature = 225C

75-24-1

7782-44-7

Deposition Temperature = 225C

75-24-1

557-20-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

TEM, Transmission Electron Microscope

JEOL 3011

Current Density

I-V, Current-Voltage Measurements

Photo Emission Tech SS80

Open Circuit Voltage

I-V, Current-Voltage Measurements

Photo Emission Tech SS80

Short Circuit Current

I-V, Current-Voltage Measurements

Photo Emission Tech SS80

Fill Factor

I-V, Current-Voltage Measurements

Photo Emission Tech SS80

Efficiency

I-V, Current-Voltage Measurements

Photo Emission Tech SS80

Leakage Current

I-V, Current-Voltage Measurements

Photo Emission Tech SS80

Substrates

Si(100)

Al2O3

Keywords

Solar

Passivation

Notes

Oxford Instruments OpAL multifaceted study of plasma A2O3 passivation layer as well as predeposition plasma surface treatments on solar cell performance.

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