Publication Information

Title: Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma

Type: Journal

Info: J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A117

Date: 2013-11-25

DOI: http://dx.doi.org/10.1116/1.4842675

Author Information

Name

Institution

NaMLab gGmbH

NaMLab gGmbH

NaMLab gGmbH

NaMLab gGmbH

Films

Deposition Temperature Range = 80-300C

352535-01-4

7732-18-5

Deposition Temperature Range = 80-300C

352535-01-4

10028-15-6

Deposition Temperature Range = 80-300C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Density

XRR, X-Ray Reflectivity

Bruker D8 Discover

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

Bruker D8 Discover

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Bruker D8 Discover

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

TiN

Keywords

PEALD Film Development

High-k Dielectric Thin Films

Low-Temperature

Notes

Rapid thermal anneal

9



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