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O3, Ozone, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 53 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition of Ga2O3 thin films
2In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
3Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
4Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
5Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
6Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
7The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
8Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
9Comparative study of ALD SiO2 thin films for optical applications
10Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
11Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
12Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
13Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
14Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
15Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
16Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
17Breakdown and Protection of ALD Moisture Barrier Thin Films
18Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
19Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
20Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
21Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
22Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
23Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
24Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
25Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
26Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
27Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
28Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
29Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
30Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
31Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
32Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
33Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
34High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
35Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
36Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
37Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
38Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
39Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
40Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
41Low temperature temporal and spatial atomic layer deposition of TiO2 films
42Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
43A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
44Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
45The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
46Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
47Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
48Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
49Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
50Designing high performance precursors for atomic layer deposition of silicon oxide
51Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
52Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
53Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate