O3, Ozone, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 49 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
2Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
3Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
4Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
5Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
6A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
8Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
9Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
10Comparative study of ALD SiO2 thin films for optical applications
11Designing high performance precursors for atomic layer deposition of silicon oxide
12Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
13Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
14Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
15The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
16Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
17Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
18Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
19Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
20Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
21Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
22In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
23Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
24Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
25Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
26Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
27Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
28Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
29Plasma enhanced atomic layer deposition of Ga2O3 thin films
30Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
31Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
32Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
33Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
34Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
35Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
36Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
37Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
38Breakdown and Protection of ALD Moisture Barrier Thin Films
39Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
40Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
41Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
42Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
43Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
44Low temperature temporal and spatial atomic layer deposition of TiO2 films
45Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
46The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
47Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
48Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
49Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer