Ozone, O₃, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2	Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
3	Breakdown and Protection of ALD Moisture Barrier Thin Films
4	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
5	Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
6	Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
7	Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
8	Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
9	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
10	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
11	The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
12	Plasma enhanced atomic layer deposition of Ga2O3 thin films
13	Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
14	Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
15	Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
16	The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
17	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
18	Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
19	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
20	Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
21	Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
22	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
23	Comparative study of ALD SiO2 thin films for optical applications
24	Designing high performance precursors for atomic layer deposition of silicon oxide
25	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
26	Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
27	Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
28	Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
29	Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
30	Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
31	Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
32	In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
33	Low temperature temporal and spatial atomic layer deposition of TiO2 films
34	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
35	Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma

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