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Ozone, O3, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
3Breakdown and Protection of ALD Moisture Barrier Thin Films
4Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
5Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
6Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
7Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
8Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
9Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
10Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
11The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
12Plasma enhanced atomic layer deposition of Ga2O3 thin films
13Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
14Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
15Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
16The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
17Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
18Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
19Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
20Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
21Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
22Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
23Comparative study of ALD SiO2 thin films for optical applications
24Designing high performance precursors for atomic layer deposition of silicon oxide
25Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
26Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
27Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
28Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
29Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
30Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
31Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
32In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
33Low temperature temporal and spatial atomic layer deposition of TiO2 films
34Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
35Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma

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