O3, Ozone, CAS# 10028-15-6

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
2Low temperature temporal and spatial atomic layer deposition of TiO2 films
3Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
4In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
5Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
6Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
7Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
8Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
9High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
10Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
11Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
12Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
13Breakdown and Protection of ALD Moisture Barrier Thin Films
14Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
15Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
16Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
17Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
18Comparative study of ALD SiO2 thin films for optical applications
19Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
20Designing high performance precursors for atomic layer deposition of silicon oxide
21Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
22Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
23Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
24Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
25Plasma enhanced atomic layer deposition of Ga2O3 thin films
26Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
27Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
28Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source
29Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
30Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
31Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
32Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
33Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
34A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
35Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
36The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
37Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
38Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
39Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
40Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
41Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
42Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
43The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
44Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
45Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
46Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
47Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
48Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
49Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
50Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
51Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
52Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
53Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide