| 1 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 2 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 3 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 4 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 5 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 6 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 7 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 8 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 9 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
| 10 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 11 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 12 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 13 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 14 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 15 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 16 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 17 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
| 18 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
| 19 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 20 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 21 | Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source |
| 22 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 23 | Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing |
| 24 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
| 25 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 26 | Comparative study of ALD SiO2 thin films for optical applications |
| 27 | Designing high performance precursors for atomic layer deposition of silicon oxide |
| 28 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 29 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 30 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
| 31 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 32 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 33 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 34 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
| 35 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
| 36 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 37 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 38 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |