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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide

Type:
Journal
Info:
Langmuir, 2010, 26 (17), pp 13732-13735
Date:
2010-06-19
DOI:
http://dx.doi.org/10.1021/la101485a

Author Information

Name Institution
Vikrant R. RaiColorado School of Mines
Vincent VandalonEindhoven University of Technology
Sumit AgarwalColorado School of Mines

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Thermal Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: -

Substrates

ZnSe
Al2O3

Notes

717