Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene

Type:
Conference Proceedings
Info:
Applied Physics of Condensed Matter (APCOM) 2015
Date:
2015-05-15
DOI:
http://kf.elf.stuba.sk/~apcom/proceedings/pdf/169_brndiarova.pdf

Author Information

Name Institution
Jana BrndiarováSlovak Academy of Sciences
Karol FröhlichSlovak Academy of Sciences
Martin HulmanSlovak Academy of Sciences
Alica RosováSlovak Academy of Sciences
Edmund DobročkaSlovak Academy of Sciences
Tauno KahroUniversity of Tartu
Jaan AarikUniversity of Tartu

Films

Thermal Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 100C

Thermal Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 100C

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Alpha 300R Confocal Raman Microscope

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Unknown
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL JSM-7600F

Substrates

Graphene

Notes

366