The publication database currently has 1636 entries.
203 Films Compositions
274 Precursors and Plasma Gases
77 Deposition Hardwares
251 Film and Plasma Characteristics
91 Theses
5041 Authors
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Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
Electron-enhanced atomic layer deposition of silicon thin films at room temperature
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Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-11-20
Author Information
| Name | Institution |
|---|---|
| Wolfgang Lehnert | Infineon Technologies AG |
| Guenther Ruhl | Infineon Technologies AG |
| Alexander Gschwandtner | R3T GmbH |
Films
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Substrates
| Silicon |
| TaN |
| TiN |
| W |
Keywords
| High-k Dielectric Thin Films |
Notes
| 196 |