Publication Information

Title: Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

Type: Journal

Info: J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012

Date: 2011-11-20

DOI: http://dx.doi.org/10.1116/1.3670876

Author Information

Name

Institution

Wolfgang Lehnert

Infineon Technologies AG

Guenther Ruhl

Infineon Technologies AG

Alexander Gschwandtner

R3T GmbH

Films

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

TTIP, Titanium(IV) i-propoxide

546-68-9

Where to buy precursor

H2O, Water

7732-18-5

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

TTIP, Titanium(IV) i-propoxide

546-68-9

Where to buy precursor

O3, Ozone

10028-15-6

Plasma TiO2 using ASM A400

Deposition Temperature Range = 150-240C

TTIP, Titanium(IV) i-propoxide

546-68-9

Where to buy precursor

O2, Oxygen

7782-44-7

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

Titanium tert-butoxide, Ti(OtBu)4

3087-39-6

Where to buy precursor

H2O, Water

7732-18-5

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

Titanium tert-butoxide, Ti(OtBu)4

3087-39-6

Where to buy precursor

O3, Ozone

10028-15-6

Plasma TiO2 using ASM A400

Deposition Temperature Range = 150-240C

Titanium tert-butoxide, Ti(OtBu)4

3087-39-6

Where to buy precursor

O2, Oxygen

7782-44-7

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

H2O, Water

7732-18-5

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

O3, Ozone

10028-15-6

Plasma TiO2 using ASM A400

Deposition Temperature Range = 150-240C

TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

O2, Oxygen

7782-44-7

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

Titanium ethoxide, Ti(OEt)4

3087-36-3

Where to buy precursor

H2O, Water

7732-18-5

Thermal TiO2 using ASM A400

Deposition Temperature Range = 150-240C

Titanium ethoxide, Ti(OEt)4

3087-36-3

Where to buy precursor

O3, Ozone

10028-15-6

Plasma TiO2 using ASM A400

Deposition Temperature Range = 150-240C

Titanium ethoxide, Ti(OEt)4

3087-36-3

Where to buy precursor

O2, Oxygen

7782-44-7

Thermal Al2O3 using ASM A400

Deposition Temperature Range = 150-240C

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

H2O, Water

7732-18-5

Plasma AlTixOy using ASM A400

Deposition Temperature Range = 150-240C

TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Leakage Current

I-V, Current-Voltage Measurements

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Anneal

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Raman Spectroscopy

-

Substrates

Silicon

TaN

TiN

W

Keywords

High-k Dielectric Thin Films

Notes

196


Mark Sowa

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