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Atomic layer epitaxy of germanium
Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
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Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-11-20
Author Information
| Name | Institution |
|---|---|
| Wolfgang Lehnert | Infineon Technologies AG |
| Guenther Ruhl | Infineon Technologies AG |
| Alexander Gschwandtner | R3T GmbH |
Films
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Substrates
| Silicon |
| TaN |
| TiN |
| W |
Keywords
| High-k Dielectric Thin Films |
Notes
| 196 |