Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-11-20
DOI:
http://dx.doi.org/10.1116/1.3670876

Author Information

Name Institution
Wolfgang LehnertInfineon Technologies AG
Guenther RuhlInfineon Technologies AG
Alexander GschwandtnerR3T GmbH

Films

Thermal TiO2

Hardware used: ASM A400
TTIP, Titanium(IV) i-propoxide
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
TTIP, Titanium(IV) i-propoxide
CAS#: 546-68-9
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-240C

Plasma TiO2

Hardware used: ASM A400
TTIP, Titanium(IV) i-propoxide
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
Titanium tert-butoxide, Ti(OtBu)4
CAS#: 3087-39-6
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
Titanium tert-butoxide, Ti(OtBu)4
CAS#: 3087-39-6
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-240C

Plasma TiO2

Hardware used: ASM A400
Titanium tert-butoxide, Ti(OtBu)4
CAS#: 3087-39-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-240C

Plasma TiO2

Hardware used: ASM A400
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
Titanium ethoxide, Ti(OEt)4
CAS#: 3087-36-3
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 150-240C

Thermal TiO2

Hardware used: ASM A400
Titanium ethoxide, Ti(OEt)4
CAS#: 3087-36-3
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-240C

Plasma TiO2

Hardware used: ASM A400
Titanium ethoxide, Ti(OEt)4
CAS#: 3087-36-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-240C

Thermal Al2O3

Hardware used: ASM A400
TMA, AlMe3, Trimethyl Aluminum
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 150-240C

Plasma AlTixOy

Hardware used: ASM A400
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
TMA, AlMe3, Trimethyl Aluminum
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-240C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: -

Substrates

Silicon
TaN
TiN
W

Keywords

High-k Dielectric Thin Films

Notes

196