Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-11-20
Author Information
Name | Institution |
---|---|
Wolfgang Lehnert | Infineon Technologies AG |
Guenther Ruhl | Infineon Technologies AG |
Alexander Gschwandtner | R3T GmbH |
Films
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Substrates
Silicon |
TaN |
TiN |
W |
Notes
196 |