Publication Information

Title:
Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-11-20

Author Information

Name Institution
Wolfgang LehnertInfineon Technologies AG
Guenther RuhlInfineon Technologies AG
Alexander GschwandtnerR3T GmbH

Films

Thermal TiO2


Thermal TiO2


Plasma TiO2


Thermal TiO2


Thermal TiO2


Plasma TiO2


Thermal TiO2


Thermal TiO2


Plasma TiO2


Thermal TiO2

Hardware used: ASM A400


CAS#: 7732-18-5

Thermal TiO2

Hardware used: ASM A400


CAS#: 10028-15-6

Plasma TiO2

Hardware used: ASM A400


CAS#: 7782-44-7

Thermal Al2O3



Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy

Substrates

Silicon
TaN
TiN
W

Keywords

High-k Dielectric Thin Films

Notes

196