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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
Type:
Journal
Info:
Langmuir, 2012, 28 (1), pp 350-357
Date:
2011-10-24
Author Information
| Name | Institution |
|---|---|
| Vikrant R. Rai | Colorado School of Mines |
| Vincent Vandalon | Eindhoven University of Technology |
| Sumit Agarwal | Colorado School of Mines |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Surface Reactions
Analysis: ATR-FTIR
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Silicon |
| Al2O3 |
Notes
| 1445 |