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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
Type:
Journal
Info:
Langmuir, 2012, 28 (1), pp 350-357
Date:
2011-10-24
Author Information
| Name | Institution |
|---|---|
| Vikrant R. Rai | Colorado School of Mines |
| Vincent Vandalon | Eindhoven University of Technology |
| Sumit Agarwal | Colorado School of Mines |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Surface Reactions
Analysis: ATR-FTIR
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Silicon |
| Al2O3 |
Keywords
| Plasma vs Thermal Comparison |
Notes
| 1445 |