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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
Type:
Journal
Info:
Langmuir, 2012, 28 (1), pp 350-357
Date:
2011-10-24
Author Information
| Name | Institution |
|---|---|
| Vikrant R. Rai | Colorado School of Mines |
| Vincent Vandalon | Eindhoven University of Technology |
| Sumit Agarwal | Colorado School of Mines |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Surface Reactions
Analysis: ATR-FTIR
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Silicon |
| Al2O3 |
Keywords
| Plasma vs Thermal Comparison |
Notes
| 1445 |