Plasma enhanced atomic layer deposition of Ga2O3 thin films

Type:
Journal
Info:
J. Mater. Chem. A, 2014, 2, 19232
Date:
2014-10-07

Author Information

Name Institution
Ranjith K. RamachandranGhent University
Jolien DendoovenGhent University
Jonas BottermanGhent University
Sreeprasanth Pulinthanathu SreeKU Leuven
Dirk PoelmanGhent University
Johan A. MartensKU Leuven
Hilde PoelmanGhent University
Christophe DetavernierGhent University

Films

Plasma Ga2O3


Thermal Ga2O3


Thermal Ga2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: Optical Transmission

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Conformality, Step Coverage
Analysis: XRF, X-Ray Fluorescence

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Substrates

SiO2
Quartz

Keywords

PEALD Film Development

Notes

Ga(TMHD)3 precursor thermally stable at 400C.
In situ XRD post deposition anneal.
Thermal H2O and O3 depositions at 300C yield very little growth.
PEALD Ga2O3 film development.
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