Publication Information

Title: Plasma enhanced atomic layer deposition of Ga2O3 thin films

Type: Journal

Info: J. Mater. Chem. A, 2014, 2, 19232

Date: 2014-10-07

DOI: http://dx.doi.org/10.1039/c4ta05007j

Author Information

Name

Institution

Ghent University

Ghent University

Ghent University

KU Leuven

Ghent University

KU Leuven

Ghent University

Ghent University

Films

Plasma Ga2O3 using Custom

Deposition Temperature Range = 75-400C

34228-15-4

7782-44-7

Thermal Ga2O3 using Custom

Deposition Temperature = 300C

34228-15-4

10028-15-6

Thermal Ga2O3 using Custom

Deposition Temperature = 300C

34228-15-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Bonding States

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Band Gap

Optical Transmission

Custom

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension Edge

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Thickness

Ellipsometry

J.A. Woollam M-2000

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Conformality, Step Coverage

XRF, X-Ray Fluorescence

Unknown

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Hiden Analytical QMS

Substrates

SiO2

Quartz

Keywords

PEALD Film Development

Notes

Ga(TMHD)3 precursor thermally stable at 400C.

In situ XRD post deposition anneal.

Thermal H2O and O3 depositions at 300C yield very little growth.

PEALD Ga2O3 film development.

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