Plasma enhanced atomic layer deposition of Ga2O3 thin films
Type:
Journal
Info:
J. Mater. Chem. A, 2014, 2, 19232
Date:
2014-10-07
Author Information
| Name | Institution |
|---|---|
| Ranjith K. Ramachandran | Ghent University |
| Jolien Dendooven | Ghent University |
| Jonas Botterman | Ghent University |
| Sreeprasanth Pulinthanathu Sree | KU Leuven |
| Dirk Poelman | Ghent University |
| Johan A. Martens | KU Leuven |
| Hilde Poelman | Ghent University |
| Christophe Detavernier | Ghent University |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: Optical Transmission
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Conformality, Step Coverage
Analysis: XRF, X-Ray Fluorescence
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Substrates
| SiO2 |
| Quartz |
Notes
| Ga(TMHD)3 precursor thermally stable at 400C. |
| In situ XRD post deposition anneal. |
| Thermal H2O and O3 depositions at 300C yield very little growth. |
| PEALD Ga2O3 film development. |
| 276 |