Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers

Type:
Journal
Info:
Chem. Mater. 2017, 29, 2024-2032
Date:
2017-02-03
DOI:
http://dx.doi.org/10.1021/acs.chemmater.6b03951

Author Information

Name Institution
Brent D. KellerMIT
Adam BertuchCambridge NanoTech
J ProvineStanford University
Ganesh M. SundaramCambridge NanoTech
Nicola FerralisMIT
Jeffrey C. GrossmanMIT

Films

Thermal MoOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Savannah
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Plasma MoOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Nucleation
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Silicon
SiO2

Keywords

Nucleation

Notes

1023