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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
Type:
Journal
Info:
Chem. Mater. 2017, 29, 2024-2032
Date:
2017-02-03
Author Information
| Name | Institution |
|---|---|
| Brent D. Keller | MIT |
| Adam Bertuch | Cambridge NanoTech |
| J Provine | Stanford University |
| Ganesh M. Sundaram | Cambridge NanoTech |
| Nicola Ferralis | MIT |
| Jeffrey C. Grossman | MIT |
Films
Thermal MoOx
Plasma MoOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Nucleation
Analysis: AFM, Atomic Force Microscopy
Substrates
| Silicon |
| SiO2 |
Notes
| 1023 |