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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
Type:
Journal
Info:
Chem. Mater. 2017, 29, 2024-2032
Date:
2017-02-03
Author Information
| Name | Institution |
|---|---|
| Brent D. Keller | MIT |
| Adam Bertuch | Cambridge NanoTech |
| J Provine | Stanford University |
| Ganesh M. Sundaram | Cambridge NanoTech |
| Nicola Ferralis | MIT |
| Jeffrey C. Grossman | MIT |
Films
Thermal MoOx
Plasma MoOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Nucleation
Analysis: AFM, Atomic Force Microscopy
Substrates
| Silicon |
| SiO2 |
Keywords
| Nucleation |
Notes
| 1023 |