Publication Information

Title: The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures

Type: Journal

Info: Facta universitatis - series: Electronics and Energetics 2014 Volume 27, Issue 4, Pages: 621-630

Date: 2014-07-21

DOI: http://dx.doi.org/10.2298/FUEE1404621P

Author Information

Name

Institution

Albena Paskaleva

Bulgarian Academy of Sciences

Films

Plasma HfO2 using Beneq TFS-200

Deposition Temperature = 300C

TEMAHf, (EtMeN)4Hf, [(C2H5)(CH3)N]4Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide

352535-01-4

Where to buy precursor

O2, Oxygen

7782-44-7

Thermal HfO2 using Beneq TFS-200

Deposition Temperature = 300C

TEMAHf, (EtMeN)4Hf, [(C2H5)(CH3)N]4Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide

352535-01-4

Where to buy precursor

O3, Ozone

10028-15-6

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

197


Mark Sowa

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