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Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 71, No. 4, pp. 185--190
Date:
2017-08-20
Author Information
| Name | Institution |
|---|---|
| Seung-Hyun Roh | Seoul National University |
| Su-Keun Eom | Seoul National University |
| Gwang-Ho Choi | Seoul National University |
| Myoung-Jin Kang | Seoul National University |
| Dong-Hwan Kim | Seoul National University |
| Il-Hwan Hwang | Seoul National University |
| Kwang-Seok Seo | Seoul National University |
| Jae-Gil Lee | Seoul National University |
| Young-Chul Byun | University of Texas at Dallas |
| Ho-Young Cha | Hongik University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Refractive Index
Analysis: -
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Conduction Band Offset
Analysis: I-V, Current-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Si(100) |
Notes
| 1103 |