Publication Information

Title: Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 71, No. 4, pp. 185--190

Date: 2017-08-20

DOI: http://dx.doi.org/10.3938/jkps.71.185

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

University of Texas at Dallas

Hongik University

Films

Thermal SiO2 using Unknown

Deposition Temperature Range = 300-450C

186598-40-3

10028-15-6

Other SiON using Unknown

Deposition Temperature Range = 300-450C

186598-40-3

10028-15-6

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

-

Refractive Index

Unknown

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Conduction Band Offset

I-V, Current-Voltage Measurements

-

Transistor Characteristics

Transistor Characterization

-

Substrates

Si(100)

Keywords

Notes

1103



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