Publication Information

Title:
Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 71, No. 4, pp. 185--190
Date:
2017-08-20

Author Information

Name Institution
Seung-Hyun RohSeoul National University
Su-Keun EomSeoul National University
Gwang-Ho ChoiSeoul National University
Myoung-Jin KangSeoul National University
Dong-Hwan KimSeoul National University
Il-Hwan HwangSeoul National University
Kwang-Seok SeoSeoul National University
Jae-Gil LeeSeoul National University
Young-Chul ByunUniversity of Texas at Dallas
Ho-Young ChaHongik University

Films

Thermal SiO2


Other SiON


Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Refractive Index
Analysis: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Conduction Band Offset
Analysis: I-V, Current-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Si(100)

Keywords

Notes

1103