Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Kwang-Seok Seo Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Kwang-Seok Seo returned 7 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
2Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
3Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
4Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
5Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
6High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
7Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate