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Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 1, PP. 30-32, 2014
Date:
2013-11-14
Author Information
| Name | Institution |
|---|---|
| Woojin Choi | Seoul National University |
| Hojin Ryu | Seoul National University |
| Namcheol Jeon | Seoul National University |
| Minseong Lee | Seoul National University |
| Ho-Young Cha | Hongik University |
| Kwang-Seok Seo | Seoul National University |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| AlGaN |
| GaN |
Notes
| 1386 |