Publication Information

Title:
Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 1, PP. 30-32, 2014
Date:
2013-11-14

Author Information

Name Institution
Woojin ChoiSeoul National University
Hojin RyuSeoul National University
Namcheol JeonSeoul National University
Minseong LeeSeoul National University
Ho-Young ChaHongik University
Kwang-Seok SeoSeoul National University

Films

Plasma SiNx


CAS#: 7803-62-5

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

AlGaN
GaN

Keywords

Notes

1386