2022 Year in Review

August 2023 Stats


The publication database currently has 1695 entries.
210 Films
283 Precursors
78 Dep Hardware Sets
255 Characteristics
96 Theses
5204 Authors

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2021 Year in Review
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Recent Database Additions
Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films Gallium nitride thin films by microwave plasma-assisted ALD Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium

SiH4, Silane, CAS# 7803-62-5

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
2Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
3Plasma enhanced atomic layer deposition of SiNx:H and SiO2
4Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
5High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
6Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
7Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
8Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
9Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
10Plasma enhanced atomic layer deposition of SiNx:H and SiO2
11Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
12Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films

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