Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


SiH4, Silane, CAS# 7803-62-5

Where to buy

NumberVendorRegionLink
1Yoodatech (Shanghai) Co., LtdSiH4, Silane - contact maggie@yoodatech.com

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
2Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
3Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
4Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
5High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
6Plasma enhanced atomic layer deposition of SiNx:H and SiO2
7Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
8Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
9Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
10Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
11Plasma enhanced atomic layer deposition of SiNx:H and SiO2
12Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane