SiH4, Silane, CAS# 7803-62-5

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
2Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
3Plasma enhanced atomic layer deposition of SiNx:H and SiO2
4Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
5High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
6Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
7Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
8Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
9Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
10Plasma enhanced atomic layer deposition of SiNx:H and SiO2
11Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
12Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films