SiH4, Silane, CAS# 7803-62-5

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 11 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
2Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
3Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
4Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
5Plasma enhanced atomic layer deposition of SiNx:H and SiO2
6Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
7Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
8Plasma enhanced atomic layer deposition of SiNx:H and SiO2
9Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
10Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
11Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma